发明名称 |
Sputtering apparatus for production of thin films of magnetic materials |
摘要 |
A magnetic film deposition chamber having Helmholtz coils and a preliminary chamber are connected through a gate valve. Two magnetic plates are fixed to the magnetic film deposition chamber near the both ends thereof. Substrates overlying apertures of a substrate holder are moved by a conveyer together with the substrate holder. The conveyor moves from the preliminary chamber to the film deposition chamber through the gate valve. The substrates then positioned over and between the magnetic plates and are located above the target in the magnetic film deposition chamber.
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申请公布号 |
US4911815(A) |
申请公布日期 |
1990.03.27 |
申请号 |
US19880281777 |
申请日期 |
1988.12.09 |
申请人 |
HITACHI, LTD. |
发明人 |
KAMEI, MITSUHIRO;SETOYAMA, EIJI;OIKAWA, SHINZOU |
分类号 |
C23C14/36;C23C14/34;C23C14/35;C23C14/50;C23C14/56 |
主分类号 |
C23C14/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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