发明名称 ABNORMALITY DETECTION CIRCUIT FOR TRANSISTOR
摘要 PURPOSE:To prevent destruction of a transistor(TR) in advance by detecting an abnormal voltage between input and output terminals of the TR. CONSTITUTION:A voltage detection section 28 is provided, which detects a voltage between two input and output terminals of a TR 20 like a drain-source voltage in, e.g., an electrostatic induction TR at first. Secondly, a comparator section 30 is provided, which compares a voltage detected by the voltage detection section 28 and a preset reference voltage when the TR 20 is turned on, or off or on and off. Thirdly, an abnormality decision section 31 is provided, which decides the presence or absence of a fault based on the result of comparison by the comparator section 30. Thus, the destruction of the TR is prevented in advance.
申请公布号 JPH0286210(A) 申请公布日期 1990.03.27
申请号 JP19880237314 申请日期 1988.09.21
申请人 TOYOTA AUTOM LOOM WORKS LTD 发明人 MIZUTANI YUICHI;TERAKURA MICHIO;KACHI TADAYOSHI
分类号 H03K17/00;H03K17/08 主分类号 H03K17/00
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