| 摘要 |
A semiconductor substrate is formed on its major surface with a first trench and a second trench which is deeper than the first trench. A region held between the first and second trenches serves as a transistor, and impurity regions for serving as source/drain regions are formed on the first and second trench sides. A bit line fills up the first trench and a capacitor electrode fills up the second trench, to be in contact with the impurity regions respectively. A word line is formed on a channel region between the source and drain regions through an oxide film. A semiconductor layer is formed on the major surface of a semiconductor substrate through an oxide film, to be provided with a first trench having the oxide film as a bottom surface and a second trench reaching the semiconductor substrate. The semiconductor layer held between the first and second trenches serves as a transistor, while a bit line and a capacitor electrode fill up the first and second trenches respectively. Two trenches are formed on the major surface of a semiconductor substrate to be provided with a semiconductor device, so that the trenches are filled up with interconnection members. The trenches are respectively provided on their side walls with impurity regions, which are connected with each other by an impurity region formed on the major surface of the semiconductor substrate.
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