发明名称 Make-link programming of semiconductor devices using laser-enhanced thermal breakdown of insulator
摘要 A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.
申请公布号 US4912066(A) 申请公布日期 1990.03.27
申请号 US19880164763 申请日期 1988.03.07
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 WILLS, KENDALL S.
分类号 H01L21/768;H01L23/525 主分类号 H01L21/768
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