Process of vapor growth of gallium nitride and its apparatus

摘要

A process and apparatus, whereby in the process of vapor growth of a gallium nitride group semiconductor (AlxGa1-xN; inclusive of x=0) thin film using an organometallic compound gas, a reactant gas which grows AlxGa1-xN and a reactant gas containing a doping element are separately introduced near to a susceptor and mixed in the vicinity of a substrate held by the susceptor to grow an I-type AlxGa1-xN thin film, are disclosed. Also, a process of vapor growth and apparatus having a mixing tube and a process and apparatus for inclining the susceptor relative to the reactant gas flow are disclosed. Moreover, a process and apparatus, whereby the AlxGa1-xN thin film is subjected to the crystal growth using a plasma of the reactant gas under reduced pressure, under the irradiation of ultraviolet rays or laser beams, are disclosed.