发明名称 MANUFACTURING DEVICE FOR AMORPHOUS SEMICONDUCTOR FILM
摘要 PURPOSE:To obtain a device having superior productivity and high reproducibility by a method wherein a vacuum tank having a plurality of gas introduction ports and gas exhaust ports, a discharge electrode provided at the outside external circumference section, and a heating heater are provided. CONSTITUTION:A sample substrate is placed on a substrate holder 22 to set the sample substrate in a quartz tube 21. After closing a quartz tube 23, vacuum exhaust is applied to the inside of the tube 21 by a vacuum pump system through a gas exhaust port 25. After the exhaustion, a predetermined gas is introduced from a gas introduction port 24 to obtain predetermined pressure. Meanwhile, a heating heater 27 is set at the outside circumference section of the tube 21 to heat the sample substrate to a predetermined temperature. After the temperature of the sample substrate arrives at the predetermined temperature, a voltage is applied to a discharge electrode 26 positioned at the outside external circumference section of the tube 21 to perform the formation of a film on the sample substrate by generating glow discharge in the tube 21.
申请公布号 JPS5896728(A) 申请公布日期 1983.06.08
申请号 JP19810194970 申请日期 1981.12.03
申请人 SUWA SEIKOSHA KK 发明人 YAMADA KUNIHARU
分类号 H01L31/04;C23C16/50;H01L21/205 主分类号 H01L31/04
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