| 摘要 |
PURPOSE:To stabilize magnetic domain structure and to obtain the reproduction signal which is decreased in waveform distortions and bit shifts by determining the magnetorestriction constant of magnetic films by the quality of the material which comes into contact with the magnetic films and maintaining stress induced type magnetically anisotropic energy at nearly the same level in the film thickness direction. CONSTITUTION:The stress induced type magnetically anisotropic energy of the magnetic films is expressed by the function of the magnetorestriction constant which is the property of the magnetic films and the main stress generated in the magnetic films. The main stress is generated by the difference between the coefft. of thermal expansion of the magnetic films and the coefft. of thermal expansion of the material with which the magnetic films are in contact. One side of the lower magnetic film 3 comes into contact with an underlying layer 2 and the opposite side comes into contact with an insulating layer 5. On the other hand, one side of the upper magnetic film 7 comes into contact with the insulating layer 5 and the opposite side comes into contact with the protective layer 8. The magnetically anisotropic energy is, thereupon, brought to the similar value of the insulating layer 5 side and the protective layer 8 and underlying layer 2 by changing the magnetorestriction constant of the surface of the magnetic films in accordance with the coefft. of thermal expansion of the material which comes into contact therewith, by which the magnetic domain structure is stabilized and the reproduction signal decreased in the waveform distortions and bit shifts is obtd. |
