发明名称 MANUFACTURE AND TREATMENT OF SEMICONDUCTOR DEVICE, LASER BEAM DEVICE THEREFOR AND SEMICONDUCTOR DEVICE OBTAINED BY USING SAME
摘要 PURPOSE:To prevent the development of cracks when wiring is being formed by performing wiring formation while repeating laser beam scanning in the orthogonal direction to the extension direction of wiring when wiring is formed on the surface of a sample. CONSTITUTION:Wiring formation is performed by making a laser beam LB scan in the orthogonal direction to the extension direction of jumper corrective wiring 94. In such a case, scanning of the laser beam LB in the orthogonal direction (direction X) is realized by a modulation unit 16, that is, amplitude formed with an AO modulator. On the other hand, the movement of the laser beam LB to the direction Y is realized relatively by moving an XY stage 7 on which a sample 13 is placed in the direction Y at low speed. When jumper corrective wiring 94 is formed, the high strength of coupling in metal molecules in the orthogonal direction to the extension direction of wiring is obtained by causing the laser beam LB to scan in the above direction. Consequently, the development of cracks is prevented when wiring is being formed and a highly reliable wiring correction is obtained.
申请公布号 JPH0282530(A) 申请公布日期 1990.03.23
申请号 JP19880235587 申请日期 1988.09.19
申请人 HITACHI LTD 发明人 OKAMOTO YOSHIHIKO;TAKEHANA YOICHI
分类号 B23K26/00;B23K26/12;C23C16/48;H01L21/285;H01L21/3205;H01L21/82;H01L23/52 主分类号 B23K26/00
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