| 摘要 |
PURPOSE:To form an n/i boundary satisfactorily, improve a light transmittance and improve a photoelectric conversion efficiency by a method wherein a microcrystal silicon carbide film is used as an n-type layer of the light incidence side cell of a laminated amorphous silicon solar battery composed of at least two layer. CONSTITUTION:After a transparent electrode 2 is formed on a transparent glass substrate 1 first, the p-type a-SiC:H film (thickness 100Angstrom ) 3, the i-type a-SiC:H film (thickness 700Angstrom , Eg 1.90eV) 4 and the n-type muc-SiC:H film (thickness 200Angstrom , phosphorus dopant content 1%) 5 of a first cell are successively built up by a plasma CVD method. Then, after an SiO2 blocking layer (thickness 50Angstrom ) 6 is formed, again the p-type a-Si:H film (thickness 100Angstrom ) 7, the i-type a-Si:H film (thickness 1100Angstrom , Eg 1.7eV) 8 and the n-type a-Si:H film (thickness 200Angstrom ) 9 of a second cell are built up by a plasma CVD method. Further, an aluminum electrode 10 is formed on them. The film forming conditions of the n-type muc-SiC:H film are, for instance, a temperature of 300 deg.C, a pressure of 200Torr and a power density of 0.5w/cm<3>. |
