发明名称 NON-DESTRUCTIVE PROCESSING METHOD FOR INTEGRATED CIRCUIT
摘要 <p>PURPOSE:To not necessarily make it unnecessary to use material to transmit ultraviolet ray to the material used for the protective film and package of an EPROM while it can shift to a stable condition different before irradiation by irradiating an electromagnetic wave set to the wavelength of the characteristic X ray of an object to constitute an integrated circuit and exciting an electron in the integrated circuit. CONSTITUTION:An electromagnetic wave set to the wavelength of the characteristic X ray of an object to constitute an integrated circuit is irradiated and an electron in the integrated circuit is excited. Namely, by the irradiation of the electromagnetic wave, the electron in the integrated circuit is excited, jumps over the potential wall due to an insulating film and the like, spreads to the circumference and shifts to the stable condition different from the stable condition before irradiation. Consequently, the memory contents can be erased even for the EPROM to use a protective film and the package not to transmit the ultraviolet ray. Thus, it is eliminate that the material of the protective film and package of a chip must be the one to transmit an ultraviolet ray 14.</p>
申请公布号 JPH0281399(A) 申请公布日期 1990.03.22
申请号 JP19880232902 申请日期 1988.09.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 YANO SHUICHI;YOSHIYAMA TADAYUKI
分类号 G11C17/00;G11C16/02;G11C16/06 主分类号 G11C17/00
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