| 摘要 |
<p>PURPOSE:To allow the simplification of the production process and the reduction of the number of masks to be used and to eliminate the damage of gate bus lines and the leakage of gate signals by forming a coating layer consisting of >=2 thin-film layers having an insulating film layer and semiconductor thin- film layer on the gage bus lines. CONSTITUTION:First the gate bus lines 202 and gate electrodes are formed by a photolithographic method on an insulating substrate 201. The gate insulating film 203, the semiconductor thin-film layer 204 and the semiconductor thin- film layer 205 are then formed by a P-CVD method; further, a thin metallic film layer 206 is continuously formed. The four layers 203 to 206 are thereafter patterned. A conductor layer 207 to be made into picture element electrodes is formed over the entire surface and is patterned. Since the gate bus lines 202 are coated thereupon with 4 layers of the laminated structures, the gate bus lines are hardly damaged by an etchant, etc., at the time of forming the source electrodes and drain electrodes of TFTs in succession thereof. The leakage of the gate signals from the gate bus lines 202 is prevented as well.</p> |
