| 摘要 |
PURPOSE:To increase a film forming speed and to reduce a manufacturing cost by depositing a silicon fine particle layer on a substrate by a glow discharge decomposition of silicon hydride gas, irradiating it with laser light to anneal it, and forming the particle layer as a polycrystalline silicon thin film. CONSTITUTION:A substrate support 21 which becomes one electrode and an upper electrode 22 connected to a high frequency power source 3 are opposed in a glow discharge chamber 1. Monosilane gas is decomposed in the chamber 1 to obtain a deposited film made of silicone fine particles. The silicon fine particle layer is radiated with a laser 5. A laser beam 51 is scanned by a movable mirror 61 to reduce in thickness the fine particle silicon layer on the substrate over its whole surface to form a thin polycrystalline film. |
