VERFAHREN ZUM HERSTELLEN VON HALBLEITERBAUELEMENTEN

摘要

Process for producing semiconductor devices, in which conductor tracks are formed on a surface of a semiconductor body by depositing a layer of Al(Si, Cu), in particular by sputtering, and then structuring it by etching. In such a layer, fairly large precipitates of CuAl2 which are only poorly etched, in particular, when etched in a Cl-containing plasma are formed at the boundary with the surface, and this may result in the conductor tracks having unsharp contours. In order to avoid such precipitates at the said surface and to achieve a homogeneous distribution of Cu in the layer, to form the layer, enough Al(Si) is first deposited just to form a continuous cohesive layer and then further Al(Si, Cu) is deposited in the same operation until the desired layer thickness is achieved.