发明名称 |
SEMICONDUCTOR DEVICE WITH A MULTILAYER STRUCTURE |
摘要 |
<p>A semiconductor device has a substrate (1, 2) provided with a mesa region (11), wherein an insulation film (6) is provided in regions other than the mesa region (11), and a polycrystalline silicon layer (10-1) and a metal silicide layer (10-2) are formed over said insulation film (6), this multilayer structure consisting of a take-out portion for at least one of the emitter (4-1), base (4-3), and collector (4-2) members of a bipolar transistor provided in the mesa region (11).</p> |
申请公布号 |
EP0102075(B1) |
申请公布日期 |
1990.03.21 |
申请号 |
EP19830108445 |
申请日期 |
1983.08.26 |
申请人 |
HITACHI, LTD. |
发明人 |
NAKAMURA, THORU;SUGAKI, SHOJIRO;OGIRIMA, MASAHIKO;NAKAZATO, KAZUO;MIYAZAKI, TAKAO;YAMAMOTO, NAOKI;NAGATA, MINORU |
分类号 |
H01L29/73;H01L21/331;H01L23/485;H01L23/522;H01L29/72 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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