发明名称 Non-volatile memory cell and sensing method.
摘要 <p>A ferroelectric memory cell (10) has one capacitor (12) isolated from bit lines (14,16) by two transistors (18,20), one on each side. The cell is read by pulsing the capacitor in one direction, then the other, storing developed charge on other capacitors or the like, and comparing voltages.</p>
申请公布号 EP0359404(A2) 申请公布日期 1990.03.21
申请号 EP19890308273 申请日期 1989.08.15
申请人 RAMTRON CORPORATION 发明人 MOBLEY, KENNETH
分类号 G11C17/04;G11C11/22;G11C14/00 主分类号 G11C17/04
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