| 摘要 |
PURPOSE:To make the inductance of a wire small, and prevent the drop of high frequency gain of a semiconductor device by providing a ground conductor and the protrusions of an electric conductor formed on the ground conductor, and connecting the protrusions to the ground terminal of a semiconductor device chip. CONSTITUTION:The ground terminals 301 and 302 of a semiconductor device chip 30 are connected through wire bonding to the tips of protrusions 11 and 12 by wires 18 and 19 respectively such as Au wire or the like. And, in the case wherein GaAs MESFET is packaged on the semiconductor device packaging system, the length of the wires 18, 19 becomes approximately in the degree of 120mum, and shortened to be one-half or less of the conventional length. As a result, the source inductance contained with the inductance of these wires 18, 19 is decreased from the conventional 0.13nH up to the 0.06nH, and the high frequency gain in frequency 12GHz is improved at about 0.5-1dB. |
