Field induced base transistor

摘要

A field induced base ballistic majority carrier transfer transistor is constructed of two regions of different bandgap semiconductors, each region having the same conductivity type but with the region with the smaller bandgap having a lower conductivity. An accumulation layer in the small bandgap semiconductor adjacent the larger bandgap semiconductor is produced by the bias voltage and serves as the base of the device. A source of emitted carriers is provided by a third region of higher conductivity on the external portion of the smaller bandgap region.