| 摘要 |
An apparatus and a method for coating electronic elements in particular semi-conductor wafers, circuit boards and the like are provided where the flow of the gaseous coating material is directed so that a contamination of the elements through deposited remains in the reaction tube from previous coating processes can be largely avoided. In addition, an integrated apparatus for cleaning the coating apparatus with a plasma is provided. In an in-situ cleaning method, a plasma generated with microwaves is fed into the reaction tube and the inner surfaces of the reaction tube are cleaned by dry etching.
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