| 发明名称 |
EEPROM with protective circuit |
| 摘要 |
A monolithically integrated MOS circuit includes a memory area having electrically programmable storage cells (E2PROM) with outputs, a potential source, at least one blocking circuit for connecting at least one of the outputs to the potential source, and a radiation sensitive sensor connected to the blocking circuit for controlling the connection of the outputs to the potential source.
|
| 申请公布号 |
US4910707(A) |
申请公布日期 |
1990.03.20 |
| 申请号 |
US19890304873 |
申请日期 |
1989.01.30 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
SCHRENK, HARTMUT |
| 分类号 |
G06F12/14;G06F21/06;G06K19/073;G07F7/10;G11C5/00;G11C16/02;G11C16/22;G11C17/00;H01L21/8246;H01L21/8247;H01L23/58;H01L27/10;H01L27/112;H01L29/788;H01L29/792;(IPC1-7):G11C13/00;G11C11/40 |
主分类号 |
G06F12/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
