| 摘要 |
PURPOSE:To prevent a current from flowing through a PN junction when a current is made to flow by applying a positive potential and a negative potential to the source and the drain, respectively, and reduce the recovery time so much that neglection is permitted by connecting a Schottky barrier junction between a source electrode and a channel region, which junction is in parallel to a PN junction between the channel region and the source region, has the same polarity as said PN junction, and has a diffusion potential lower than said PN junction. CONSTITUTION:In an MIS field effect transistor, a Schottky barrier junction 20 is formed in a channel region 4 and from the main surface 2 side. The transistor is constituted of a Schottky barrier type region 21 having a P-type impurity density lower than the channel region 4, and a Schottky barrier electrode 22 formed on a P-type semiconductor region 21, which electrode forms a Schottky junction in combination with the above P-type semiconductor region. Since the source electrode 10 is connected with the channel region 4 via the Schottky barrier junction 20, the high speed operation together with the recovery time reduction are facilitated without decreasing the breakdown strength between the source and the drain. |
