| 摘要 |
PURPOSE:To measure the exposure distribution on the surface of a wafer within a short time with high accuracy by detecting the difference between the intensity of the light transmitting through the first filter and that of the light transmitting through the second filter. CONSTITUTION:A stage 11 is moved so that an X-ray detector 4 comes to a predetermined exposure position so set the first filter 1 above the detector 4 and an X-ray mirror 10 is subsequently shaken so that X-rays 8 pass above the detector 4 and the intensity of X-rays 8 is measured through the filter 1 to set the output thereof to I1. Next, a filter holder 3 is rotated by a holder driving part 5 so that the second filter 2 is positioned above the detector 4 and the intensity of X-rays is measured through the filter 2 to set the output thereof to I2. Then, the difference between I1, I2 is calculated to be set to the X-ray intensity data at that position. Next, the stage 11 is moved and this process is successively repeated to calculate X-ray intensity data at all of exposure positions. |
