| 摘要 |
PURPOSE:To industrially and advantageously obtain silicon nitride without using NH3 by reacting respective crosslinked polycarbosilastyrene and/or polysilastyrene with N2 in an N2 gas stream at a high temperature. CONSTITUTION:A crosslinked polycarbosilastyrene obtained by heating or irradiating a polycarbosilastyrene with ultraviolet ray or crosslinked polysilastyrene or both are reacted with N2 in an N2 gas stream at a temperature of >= about 1200 deg.C, practically 1400 deg.C. The treating time in this case is preferably 90min-4hr. Silicon nitride can be then formed on the surface in contact with the N2, readily separated and taken out. Since NH3 is not used, an apparatus is hardly corroded and the above-mentioned method is safe. Furthermore, the crosslinked polysilastyrene which is the raw material is obtained by applying energy to copolymers of dichlorodimethylstyrene and dichloromethylphenylsilane using heat, radiation, etc. |
