| 摘要 |
<p>A vertical MOSFET includes a base region (3) formed on the surface of a drain region (2), a source region (4) provided in the base region (3), a second semiconductor region (5) provided on the surface of the drain region between the base regions (3), the second semiconductor region (5) having the same conductivity type as the drain region (2) and an impurity concentration higher than that of the drain region (2), a third semiconductor region (3) of the opposite conductivity type provided in the second semiconductor region (5), a gate electrode (6) provided on the base region (3) and an insulating film (29) provided on the second semiconductor region (8).</p> |
