| 摘要 |
<p>A method of manufacturing a semiconductor device is set forth including the step of depositing from a vapor phase crystalline layers on a substrate in a chamber of a reactor (R) by means of vector gases and reacting gases. The vector gases and reacting gases are introduced into the chamber of the reactor by means of one or several systems of tubes, each system composed on the one hand of a main tube (P), one end of which merges into the reactor (R) and the other end of which merges at an outlet (E), and on the other hand of three secondary tubes (6,5,7) designated as first (6), second (5) and third (7) secondary tubes with the main tube (P) comprising four restrictions (1,2,3,4) between which the three respective secondary tubes merge. The first secondary tube (6) merges closest to the reactor (R). The first (6) and third (7) secondary tubes serve to transport the vector gas(es) at a flow rate D1 and D3, respectively, while the second (5) secondary tube serves to transport the reacting gas at a flow rate D2. This system of tubes: (a) is equivalent to a valve guiding the reacting gas to the reactor (R) when D3>D1 and D3>D2, and (b) is equivalent to a valve guiding the reacting gas to the outlet (E) when D1>D3 and D1>D2.</p> |
