摘要 |
A positive-type photoresist composition which comprises an alkali soluble novolak resin and at least one light-sensitive material represented by the following general formulae (I) to (IV) to provide a resist pattern with high resolution, high reproduction fidelity, desirable sectional shape, wide latitude of development, high heat resistance and high storage stability: <CHEM> (wherein X represents -CO-, or -SO2-; p represents an integer from 2 to 4; R's may be the same or different, each being -H, -OH, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted acyl group, a substituted or unsubstituted acyloxy group, <CHEM> provided that R always contains at least one of <CHEM> ; R1 represents - @-, -@-, a substituted or unsubstituted di- to tetra-valent alkyl group, or a substituted or unsubstituted di- to tetra-valent aromatic group; and l , m and n represents 0 or an integer of from 1 to 3, provided that at least one of them is not zero).
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申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
UENISHI, KAZUYA C/O FUJI PHOTO FILM CO., LTD.;SAKAGUCHI, SHINJI C/O FUJI PHOTO FILM CO., LTD.;KOKUBO, TADAYOSHI C/O FUJI PHOTO FILM CO., LTD. |