| 摘要 |
PURPOSE:To enable the contact resistance between an information storing electrode and a source and a drain region of a transfer transistor to be small in value and variability by a method wherein the information storing electrode of a cell capacitor is, at least, constituted with a conductive layer formed through an epitaxial growth from a semiconductor substrate. CONSTITUTION:Information storing electrodes 5a and 5d of a cell capacitor is composed of a conductive layer formed through an epitaxial growth from a polysilicon film which is formed on the side face of a substrate 1 and a trench 2. Therefore, the information storing electrodes 5a and 5b are electrically connected to a source and a drain region of a transfer transistor TR through a silicon layer epitaxially grown from the semiconductor substrate 1. By this setup, a natural oxide film is not formed on the interface between a source and a drain region and an information storing electrode, so that the source and the drain region and the information storing electrode can be electrically connected with each other at a small resistance value. Furthermore, the resistance value can be decreased in variability. |
