发明名称 |
Semiconductor integrated circuit device with high reliability wiring layers |
摘要 |
A semiconductor integrated circuit device includes a semiconductor substrate and a wiring layer formed on the substrate. An output buffer transistor is provided with its gate formed along the direction of the wiring. The resulting device has improved area efficiency and is less susceptible to wiring element slide without requiring slits to be formed in the wiring structure-and thus also has lower current density.
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申请公布号 |
US4908690(A) |
申请公布日期 |
1990.03.13 |
申请号 |
US19870106880 |
申请日期 |
1987.10.13 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HATA, MASAYUKI;NAKAGAWA, HIROMASA |
分类号 |
H01L21/3205;H01L21/822;H01L23/52;H01L23/522;H01L23/528;H01L27/04 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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