MOS TYPE UNVOLATILE SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE:To shorten a reading-out time by making all the outputs of an address decoder into a selection condition at the time of a reading-out operation and supplying the output of an address selection circuit to a word line to which the MOS type nonvolatile memory transistor of an EEPROM is connected. CONSTITUTION:An address decoder 5 inputs an address signal and a chip enable signal, decodes, inputs a decoder output and an elimination signal into an address selection circuit 6 and selects an address. Address-selection by this circuit 6 is controlled 7 based on the reading-out signal and the elimination signal. The storage information of each MOS type nonvolatile memory transistor TR8B of the EEPROM 8 being specified by the circuit 6 is read out in a word line 8C unit by a sense amplifier 9. The reading-out time can be shortened and a consuming power can be reduced by deciding the match of each output of this amplifier 9 with an AND circuit 10 and outputting all the elimination signals.