| 摘要 |
<p>PURPOSE:To reduce the ratio of generation of a display defect based on a defect of a picture element electrode by constituting plural picture element electrode parts by dividing one piece of picture element electrodes into plural electrodes, and also, connecting plural switching elements to each picture element electrode part. CONSTITUTION:In the X direction and the Y direction of intersections of gate wirings 15a, 15b,... and source wirings 16a, 16b,..., two pairs of thin film transistors (TFT) 11a and 11b are connected to one intersection. To one pair of TFTs 11a, a picture element electrode part 13a is connected, and to the other pair of TFTs 11b, a picture element electrode part 13b is connected. By these two pieces of electrode parts 13a, 13b, one piece of picture element electrode 13 is constituted. That is, the electrode 13 is divided into two in the Y direction. In such a manner, even when a defect is generated in one piece of TFT or one of the electrode parts 13a, 13b, it does not cause a defect of the whole picture element electrode. Accordingly, the ratio of generation of a display defect based on a defect of the picture element electrode containing a defect of the gate wiring, the source wiring or the TFT can be reduced remarkably.</p> |
