| 摘要 |
<p>PURPOSE:To make it possible to reduce the resistance of an electrode for additional capacity without reducing the additional capacity of the electrode by constituting the electrode for the additional capacity of two layers structure, in which the lower side layer contains a nitrogen atom as an impurity, and the upper side layer does not contain the nitrogen atom and is formed of a tantalum oxide film on the surface thereof. CONSTITUTION:A gate electrode 3 and the electrode 11 for the additional capacity are constituted of the two layers structure of a 1st Ta layer and a 2nd Ta layer, respectively. The 1st. Ta layers 3a and 11a are composed of the Ta layer contg. the nitrogen atom, and the 2nd Ta layers 3a and 11b are composed of the Ta layer which does not contain the nitrogen atom. An insulating film 12 is composed of Ta2O5 and has a thickness of about 2,000Angstrom and is obtained by subjecting the surface of the 2nd Ta layer 11b to an anodic-oxidation, and is formed on the electrode 11 for the additional capacity. The insulating film 12 composed of Ta2O5 is formed on the 2nd Ta layer 11b by subjecting the surface of the layer 11b which does not contain the nitrogen atom to the anodic-oxidation. Thus, the electric resistance of the electrode for the additional capacity is reduced without reducing the additional capacity of the electrode.</p> |
