| 摘要 |
PURPOSE:To readily form a tapered shape on the side surface of a connecting window and to enable to form Al wirings by forming a silicon oxide insulating layer on a semiconductor substrate and opening by a dry etching method a window at the insulating layer, thereby forming a connecting window with an upper layer. CONSTITUTION:After a PSG film 5 is covered on an Al wiring layer 2 of primary layer formed on a semiconductor substrate 1, an organic solution which contains silicon compound is coated with a span coater on the upper surface of the film. Subsequently, it is heat treated, thereby forming an oxidized silicon film 6. Then, a resist film 7 is coated, is patterned, thereby exposing only the connecting window forming region, a mask is coated on the other part, the films 5, 6 are then etched, and the side face of the window is formed in a tapered shape. Thereafter, the film 7 is removed, an Al wiring layer 8 is coated on the upper layer, thereby obtaining the layer 8 of the upper layer of constant thickness. |
