Gas distributor for OMVPE Growth

摘要

A new gas distributor 31 provides an extremely uniform gas across a wide cross section distance. An OMVPE reactor equipped with this distributor, a unique low volume quartz insert, a load-locked growth chamber and a low pressure operation scheme provide a reactor system capable of growing extremely uniform GaAs and AlGaAs epilayers across four two-inch wafers or one three to four inch wafer with atomic layer abruptness capablity. The performance of such an OMVPE reactor provides superior morphology and throughout compared to conventional OMVPE reactors with equivalent performance to MBE. Since the gas distributor is capable of distributing an extremely uniform gas across a wide cross-section distance, it can also be employed in other types of OMVPE reactors to improve the material uniformity.