发明名称 CHARGING EQUALIZING CIRCUIT FOR SEMICONDUCTOR MEMORY
摘要 PURPOSE: To secure charge equalization of a pair of signal lines by stopping the charge equalization of selected and divided memory sections more than one. CONSTITUTION: When memory sections which are divided more than one and given their address signals are selected, a section decipherment signal anti-SS1 falls to a low level in a section pre-decoder, a signal BLS is reversed to a low level via an inverter 11, NAND circuit NA1, and an inverter 13, and charge equalization of a pair of bit lines of BLn and an anti-BLn by transistors TR11-TR13 in a bit line equivalent circuit EQ1 is stopped. Similarly, charge equalization of a pair of data lines DLS and ant-DLS by a data line equivalent circuit EQ2 is stopped. Therefore, an operation of a selected memory section of which a signal line pair is sufficiently charged and equalized is secured.
申请公布号 JPH0273594(A) 申请公布日期 1990.03.13
申请号 JP19890175383 申请日期 1989.07.05
申请人 SANSEI ELECTRON CO LTD 发明人 KIMU BIYONGIYUUN;WANGU SANGUKI
分类号 G11C11/41;G11C7/12;G11C8/18;G11C11/40;G11C11/419;G11C16/06;G11C17/00 主分类号 G11C11/41
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