SEMICONDUCTOR STORAGE DEVICE

摘要

PURPOSE:To miniaturize a high voltage generating circuit by providing a well potential control circuit, which changes a potential in a well area where a switching MOSFET is formed according to the switching operation of the MOSFET. CONSTITUTION:A high voltage +VVPP for writing having a polarity and a high voltage the inverse of VPP for erasing having the other polarity are respectively formed, level exchange to selectively output the respective high voltages conforming to a decoder output signal in an X system according to a write/erase operating mode is executed, and a signal is transmitted to a word wire WW, to which the gate of a nonvolatile memory element is coupled through switching MOSRETs Q4 and Q3. Further, for the switching control of the switching MOSFETs Q4 and Q3, the potential of a well area C-WELL where the switching MOSFETs are formed is changed according to the switching operation. Thus, write/erase high voltage generating circuit can be made smaller.