| 摘要 |
<p>PURPOSE:To obtain a storage device having large storage capacity and at an inexpensive bit unit price by providing first and second striped electrodes crossing each other with pinching a ferroelectric substance layer on a semiconductor substrate, and an integrated circuit connected to the first and second striped electrodes. CONSTITUTION:Row lines 2 are provided in a striped way on a semiconductor substrate 1, a ferromagnetic substance layer 3 is provided on the row lines 2, column lines 4 are provided in the striped way on the ferroelectric substance layer 3, and the row lines and the column lines 4 are linked to a row decoder, a sense amplifier, an I/O gate, and a column decoder, which consist of the integrated circuits provided on the semiconductor substrate 1. Further, the ferroelectric substance layer 3 pinched between the row line 2 and column line 4 stores information, and the ferroelectric substance layer 3 pinched by a single row line 2 and a single column line 4 forms a signal cell. Thus, the storage device providing the large storage capacity and at low costs can be obtained.</p> |
