| 摘要 |
PURPOSE:To collect excessive carriers which are generated in a semiconductor substrate by the input of radiation such as alpha rays efficiently by the simple change in structure in the vicinity of a memory capacitor. CONSTITUTION:A large-area carrier collecting embedded region 4 which is coupled with a cell plate in a memory capacitor is provided in the vicinity of the interface between a semiconductor substrate 1 and a semiconductor layer 5 thereon. The most parts of the excessive carriers which are generated in the semiconductor substrate by the input of radiation such as alpha rays are collected into the large-area carrier collecting embedded region 4 and made to flow into the cell plate. The carriers which flow into a source region 10 and a drain region 11 are few. The fluctuation in potentials at the source and drain regions 10 and 11 can be suppressed. |
