| 摘要 |
PURPOSE:To prevent the undercut of resist patterns and to improve the shape thereof by executing the full-surface exposing and developing of a resist layer plural times. CONSTITUTION:The full-surface exposing and developing of the resist layer 2 are executed plural times and the unexposed part 3 formed at the time of the 1st exposing is removed dividedly plural times. The 1st exposed part 4, therefore, acts as a mask to prevent the sufficient arrival of light at the part to be shadowed by the 1st exposed part 4 at the time of the full-surface exposing in order to remove the lower layer part of the unexposed part 3 and, therefore, this part remains insoluble and the part 8 eventually remains without being removed at the time of the development. The undercut of the resist pattern is prevented in this way and the shape thereof is improved. |
