MOS TRANSISTOR MANUFACTURING METHOD

摘要

The manufacturing method for a MOS transistor for high density and low leakage current includes the following steps; (a) forming a field oxide film (17) by wet oxidation method and an active region (16) on the surface of a Bionimplanted Si substrate (18); (b) forming self- alined source/drain as using the oxide film (19) formed on (18) and P, AS ion implanted polysilicon (20); (c) forming sidewall polysilicon (21) to connect the n-LDD region (25) by reactive ion etching the surface of (20), (18); (d) forming a gate oxide (24) and a gate electrode (23) by using the dry oxidation of the surface of (16), (21).