发明名称 |
VERFAHREN ZUR HERSTELLUNG EINER VERTIKALEN LEISTUNGS-MOSFET-STRUKTUR. |
摘要 |
A power MOSFET semiconductor structure is fabricated using the steps of depositing an epitaxial layer 12 of N conductivity type silicon on an underlying silicon substrate 10 of N conductivity type, forming a plurality of polycrystalline silicon electrodes 18 on the epitaxial layer 12, each electrode 18 being separated from the epitaxial layer 12 by a layer of insulating material 15; introducing P 30 and N 33 conductivity type impurities into the epitaxial layer 12 between the electrodes 18, the P type impurity 30 underlying the N type impurity 33; removing regions of the epitaxial layer 12 to form openings 21 in the epitaxial layer 12 between the electrodes 18, the removed regions 21 extending through the N type region 33 but not through the P type region 30; and depositing electrically conductive material 40 in the opening 23. The resulting semiconductor structure includes an N type substrate 10, an N type epitaxial layer 12, an opening 21 in the epitaxial layer 12 extending downward a selected distance, an upper N type region 33 surrounding the opening 21 and extending to the surface of the epitaxial layer 12, a lower P type region 30 which extends to the surface of the epitaxial layer 12 and everywhere separates the N type region 33 from epitaxial layer 12, an electrode 40 formed in the opening and extending to the upper surface of the epitaxial layer 12, and a second electrode 18 disposed above epitaxial layer 12 and separated from it by insulating material 15. |
申请公布号 |
DE3381185(D1) |
申请公布日期 |
1990.03.08 |
申请号 |
DE19833381185 |
申请日期 |
1983.05.17 |
申请人 |
FAIRCHILD SEMICONDUCTOR CORP., CUPERTINO, CALIF., US |
发明人 |
VORA, MADHUKAR B., LOS GATOS CALIFORNIA 95030, US;PATEL, VIKRAM M., SARATOGA CALIFORNIA 95070, US |
分类号 |
H01L21/336;H01L23/485;H01L29/10;H01L29/78;(IPC1-7):H01L21/60;H01L23/48 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|