| 摘要 |
PURPOSE:To prevent melting away of phosphorus due to absorbed humidity and enhance reliability of semiconductor device by surrounding an insulating film with other insulating film such as Si3N4 at the time of providing an interlayer insulating film containing high concentration phosphorus to an IC, LSI, and the like. CONSTITUTION:A thick field SiO2 film 15 is formed with an inversion preventing P<+> type region 16 used as a base layer at the periphery of a P type Si substrate 11 and a gate SiO2 film 17 is deposited on the active region of a MOS transistor surrounded thereby. Then, a gate electrode 18 consisting of a polycrystalline Si is formed at the center of film 17, the SiO2 film 19 and Si3N4 film 21 are deposited thereon and an N type source, drain region 20 are formed by diffusion within the substrate 11 in both sides thereof with such films used as the mask. Thereafter, the region 20 is covered with the Si3N4 film 21, a SiO2 film 22 is provided between the region 20 and electrode 18, and interlayer insulating films 23, 24 of PSG containing a large amount of phosphorus are formed using said film as the base layer. |
