| 摘要 |
PURPOSE: To expose a semiconductor surface even in a non-flat surface shape without complicate regulating operation at the time of forming a resin structure by forming a desired sectional shape of a resin layer only by a reactive ion etching of a single thick resin layer. CONSTITUTION: A resist 2 is mounted on a surface of a semiconductor material, and a stop layer 3, an upper resin layer 4 are provided thereon. Then, a window 5 is moved into the layer 3 by anisotropic dry etching. A structure formed via the window 5 is moved to a deep place of the resist 2, and the layer 4 is removed. Thereafter, a blank region in the resist 2 is extended, the resist 2 is etched more deeply, and a projection 6 of the window 4 is formed on a layer portion directed toward an object 1 of the resist 1. Thus, a surface of the semiconductor material is exposed, and the layer 3 is then removed. Metal is deposited on the structured resin layer as a gate metallized portion, and further a base layer 20 is formed.
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