| 摘要 |
PURPOSE:To prevent deformation and damage of a metal bonding pad by surrounding the metal bonding pad for connecting an internal circuit and forming a polycrystal silicon layer. CONSTITUTION:By surrounding a metal bonding pad 15 for connecting an internal circuit formed on an insulation film surface 12 on a semiconductor substrate 11, a polycrystal silicon layer 19 is formed in circular shape. For example, a polycrystal silicon wiring 13 connected to the internal circuit. an interlayer insulation film 14, a metal bonding pad 15. a protection film 17, a contact window 18 for connecting the metal film and the polycrystal silicon wiring, a polycrystal silicon layer 19 surrounding the periphery of the metal bonding pad 15 are provided on a thick insulation film 12 on the N-type silicon substrate 11. It prevents stress from operating directly on the side surface of the metal bonding pad even if the stress is generated at a protection film on the surface of a semiconductor device and deformation and damage of the metal bonding pad since the large part of stress is absorbed by the polycrystal silicon layer. |
