| 摘要 |
PURPOSE:To make a device which is unsusceptible to the ambient temperature and which has a high reliability by separating an electrode on a substrate side of the device which is made based on a buried-type semiconductor laser in which a p-type semiconductor substrate is used. CONSTITUTION:In a laser active area 34 which is a base of a compound integrated device, a p-InP buffer layer 13 and a p-InP clad layer 2 are deposited on a p-InP substrate 1 and then a diffraction grating 3 is formed. On the diffraction grating 3, a p-InGaAs guide layer 4 and an InGaAsP active layer 5 is deposited. Nextly, the laser active area 34 is etched with the active layer 5 left untouched in the width of about 1mum. Then, the active layer 5 is buried on both sides by a p-InP buried layer 7, an n-InP block layer 8 and a p-InP block layer 9 and the active layer 5 and the n-InP block layer 8 are cut by the dopant diffusing technology. Then, the substrate is made thin by polishing the rear side of it and a separation electrode 12 is formed. With the separation electrode 12 being used as a mask, ditches 14 are formed which are deep enough to reach the p-InP buffer layer 13. Then, the active area 34 is assembled by a junction assembly method with the active layer 5 faced down. |
