发明名称 PHYSICAL VAPOR DEPOSITION DUAL COATING APPARATUS AND PROCESS
摘要 <p>A machine for covering a substrate (Fig. 14, 540) by means of both cathodic are plasma deposition (CAPD) (Fig. 2) and magnetron sputtering (Fig. 1) without breaking vacuum in a single chamber (Fig. 14, 421). A computer system monitors (Fig. 3, 403, 405) and controls all coating process parameters to coat in any sequence multiple thin film layers using either the CAPD or magnetron sputtering process. A rotating substrate table (Fig. 14, 470) used in conjunction with internal and external targets coats both sides of the substrate simultaneously.</p>
申请公布号 WO1990002216(A1) 申请公布日期 1990.03.08
申请号 US1988002950 申请日期 1988.08.25
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