| 摘要 |
<p>In interline transfer type image sensing devices, image smear is produced when light is allowed to penetrate into the charge transfer regions of the device. In this disclosure, a device with improved light shielding, and, hence, reduced smear, is described. The device incorporates a refractory opaque material for the light shield which is placed in close proximity to the semiconductor surface, and a flowed glass planarization layer is disposed over the light shield.</p> |
