| 摘要 |
<p>A BICMOS inverter circuit having a high input impedance, improved switching characteristics, low power requirements, high noise immunity, high drive capability, an increased output voltage swing, reduced body effect, high current drivability and improved power dissipation comprises a CMOS inverter for receiving an input signal and bipolar push-pull output transistors (58, 59) for supplying an output. An intermediate CMOS stage (41, 42) is coupled between the CMOS inverter and the bipolar push-pull output transistors and to power supply voltages in a manner that eliminates body effect.</p> |
