| 发明名称 |
Metal bump type semiconductor device and method for manufacturing the same. |
| 摘要 |
A semiconductor element is formed in a semiconductor substrate (11). An electrode wiring pattern (15B, 15E) which is connected to the active region and contains aluminum as the main component is formed on the main surface of said semiconductor substrate (11). A metal bump (18B, 18E) is formed on the electrode wiring pattern (15B, 15E). The metal bump (18B, 18E) contains zinc of 1 to 10 % in mass percentage in addition to at least one element selected from a group consisting of tin, lead and aluminum. |
| 申请公布号 |
EP0357064(A2) |
申请公布日期 |
1990.03.07 |
| 申请号 |
EP19890116100 |
申请日期 |
1989.08.31 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
HIDESHIMA, MAKOTO INTELLECTUAL PROPERTY DIVISION;TSUNODA, TETSUJIRO INTELLECTUAL PROPERTY DIVISION;KOJIMA, SHINJIRO INTELLECTUAL PROPERTY DIVISION;ANDO, MASARU INTELLECTUAL PROPERTY DIVISION |
| 分类号 |
H01L21/60;H01L23/485;H01L23/532 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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