| 摘要 |
A fine pattern having a high aspect ratio is precisely formed using a focused-ion beam system (10) by depositing a pattern using an ion beam and a reactive gas, detecting an image of the deposited pattern with the ion beam in the absence of the gas, comparing the image of the deposited pattern with data of a required pattern to be formed, and removing any excess portion of the dposited pattern again by use of the ion beam. If necessary, depositing a further portion is deposited and the removal step is repeated. The deposited pattern removal step sharpens up the aspect ratio of the deposited pattern and reduces its line width. |
