Method of manufacturing an optoelectronic device.

摘要

The invention relates to a method of manufacturing an optoelectronic device. An indium phosphide part of a semiconductor body is contacted either directly or indirectly through a ternary or quaternary layer by means of a zinc diffusion. In order to improve the contact resistance, after the zinc diffusion and before the application of contacts, a heat treatment of the semiconductor body is carried out in the absence of a zinc source.