Three-dimensional memory element and memory device.

摘要

A three-dimensional memory element comprises a multilayer tunnel switch portion (H) formed by alternately stacking conductive films (24) and insulating films (23), both the ends of the switch portion consisting of insulating films (23a, 23e), a write electrode (25) formed on the insulating film (23e) as one end of the multilayer tunnel switch portion (H), a read electrode (22) formed on the insulating film (23a) as the other end of the multilayer tunnel switch portion (H), and charge accumulating capacitors (C1 to C4) respectively connected to the conductive films (24a to 24d) of the multilayer tunnel switch portion (H).